BU506F Datasheet | NXP Semiconductors

DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS - Horizontal deflection circuits of colour television receivers - Line-operated switch-mode applications. PINNING PIN(1) 1 2 3 Note 1. All pins electrically isolated from mounting base. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU506DF) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Figs 2 and 3 see Figs 2 and 3 Th ≤ 25 °C; see Fig.4 inductive load; see Fig.11 VBE = 0 open base CONDITIONS DESCRIPTION base collector emitter 1 2 3 MBC668 BU506F; BU506DF 2 2 1 MBB008 1 3 MBB077 3 a. BU506F. b. BU506DF. Front view Fig.1 Simplified outline (SOT186) and symbols. TYP. - - - 1.5 - - - - 0.7 MAX. 1500 700 1 2.2 3 5 8 20 - UNIT V V V V A A A W µs IC = 3 A; IB = 1.33 A; see Figs 7 and 8 IF = 3 A THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink pound and 30 ±5 N force on centre of package. 2. Mounted with heatsink pound and 30 ±5 N force on centre of package. 1997 Aug 14 1 PARAMETER CONDITIONS note 2 thermal resistance from junction to ambient VALUE 6.35 3.85 55 UNIT K/W K/W K/W thermal resistance from junction to external heatsink note 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO ICsat IC ICM IB IBM Ptot Tstg Tj PARAMETER collector-emitter peak voltage collector-emitter voltage collector saturation current collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature Th ≤ 25 °C; see Fig.4 VBE = 0 open base VCE = 5 V see Figs...