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BU506F - Silicon diffused power transistors

General Description

High-voltage, high-speed switching NPN power transistor in a SOT186 package.

The BU506DF has an integrated efficiency diode.

Horizontal deflection circuits of colour television receivers

Line-operated switch-mode applications.

PINNING PIN(1) 1 2 3 Note 1.

Key Features

  • nikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BU506F; BU506DF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of colour television receivers • Line-operated switch-mode applications. PINNING PIN(1) 1 2 3 Note 1. All pins electrically isolated from mounting base.