NXP Semiconductors BU508AW
Silicon Diffused Power Transistor
BU508AW Specifications
- Package : TO-247
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 8A
- Terminals : 3
- Collector Emitter Voltage : 700V
- Emitter Base Voltage : 9V
- Collector Emitter Saturation Voltage : 1V
- Max Power Dissipation : 125W
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BU508AW |
|---|---|
| Datasheet | BU508AW Download |
| Manufacturer |  NXP Semiconductors |
| Description | Silicon Diffused Power Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 125 1.0 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.5 A; f = 16kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collectorDESCRIPTION
PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Co...
