NXP Semiconductors BUJ100LR
Silicon diffused power transistor
BUJ100LR Specifications
- Package : SOT-54
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 1A
- Terminals : 3
- Collector Base Voltage : 700V
- Collector Emitter Voltage : 400V
- Emitter Base Voltage : 9V
- Collector Emitter Saturation Voltage : 1.5V
- Max Power Dissipation : 2.1W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | BUJ100LR |
|---|---|
| Datasheet | BUJ100LR Download |
| Manufacturer |  NXP Semiconductors |
| Description | Silicon diffused power transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
Fast switching High voltage capability of 700 V 1.3APPLICATIONS
Compact fluorescent lamps (CFL) Electronic lighting ballasts Inverters Off-line self-oscillating power supplies 1.4 Quick reference data Table 1. IC Ptot VCESM Quick reference Conditions DC; see Figure 1 Tlead ≤ 25 °C; see Figure 2 VBE = 0 V Min Typ Max 1 2.1 700 Unit A W V collector current total power dissipation collector-emitter peak voltage DC current gain Symbol Parameter Static characteristics hFE VCE = 5 V; IC = 0.8 A; Tlead = 25 °C; see Figure 8 and 9 5 7.5 20 NXP Semiconductors BUJ100LR Silicon diffused power transistor 2. Pinning information Table 2. Pin 1 2 3 B C E Pinning information SymbolDESCRIPTION
base collector emitter B E 321 sym123 Simplified outline Graphic symbol C SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Package Name BUJ100LR TO-92DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Type number 4. Limiting values Table 4.
