BUJ304A Datasheet | NXP Semiconductors

DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat h FESAT tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP. 0.3 11 25 MAX. 1000 1000 500 6 10 100 1.0 15 50 UNIT V V V A A W V ns Tmb ≤ 25 ˚C IC = 4.0 A;IB = 0.8 A IC = 4.0 A; VCE = 5 V IC = 5.0 A; IB1 = 1.0 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 500 1000 6 10 3 6 100 150 150 UNIT V V V A A A A W ˚C ˚C Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 60 MAX. 1.25 UNIT K/W K/W March 1999 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES,ICBO ICEO IEBO VCEOsust VCEsat VBEsat h FE h FE h FESAT PARAMETER Collector cut-off current 1 Collector cut-off current Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter...