BUJ403A
BUJ403A is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ403A Silicon Diffused Power Transistor
Product specification
December 1998
NXP Semiconductors
Silicon Diffused Power Transistor
Product specification
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat h FEsat tf
PARAMETER
Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time
CONDITIONS VBE = 0 V
Tmb ≤ 25 ˚C IC = 2 A; IB = 0.4 A IC = 3 A; VCE = 5 V IC=2.5 A; IB1=0.5 A
TYP.
0.15 15.5 170
MAX.
1200 1200 550
6 10 100 1.0 300
UNIT
V V V A A W V ns
PINNING
- TO220AB
PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector
PIN CONFIGURATION tab
1 23
SYMBOL c b e
LIMITING...
