BUJ403BX Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat h FEsat tfi PARAMETER Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 18 0.14 21 140 MAX. 1200 1200 525 6 10 32 1.0 25 203 UNIT V V V V A A W V ns Ths ≤ 25 ˚C IC = 2 A; IB = 0.4 A IC = 2 A; VCE = 5 V IC = 2.5 A; IB1 = 0.5 A PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the...