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BUK101-50GS Datasheet Powermos Transistor Topfet

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors Product specification PowerMOS transistor.

General Description

Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK101-50GS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX.

50 29 75 150 50 UNIT V A W ˚C mΩ APPLICATIONS General controller for driving lamps motors solenoids heaters

Key Features

  • Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads.

More Datasheets from NXP Semiconductors

Part Number Description
BUK101-50GL PowerMOS transistor Logic level TOPFET
BUK101-50DL PowerMOS transistor Logic level TOPFET
BUK100-50DL PowerMOS transistor Logic level TOPFET
BUK100-50GL PowerMOS transistor Logic level TOPFET
BUK100-50GS PowerMOS transistor TOPFET
BUK102-50DL PowerMOS transistor Logic level TOPFET
BUK102-50GL PowerMOS transistor Logic level TOPFET
BUK102-50GS PowerMOS transistor TOPFET
BUK104-50L PowerMOS transistor Logic level TOPFET
BUK104-50LP PowerMOS transistor Logic level TOPFET

BUK101-50GS Distributor