BUK107-50DS Datasheet | NXP Semiconductors

DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications. QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance MAX. 50 0.7 1.8 150 175 UNIT V A W ˚C mΩ APPLICATIONS General controller for driving lamps small motors solenoids FEATURES Vertical power DMOS output stage Overload protected up to 85˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input Input clamping suitable for pull-up resistor drive circuit Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on all pins Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP INPUT POWER MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT223 PIN 1 2 3 4 input drain source drain (tab) DESCRIPTION PIN CONFIGURATION SYMBOL D TOPFET I March 1997 Rev 1.200 Philips Semiconductors Product specification Power MOS transistor Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ID II IIRM PD Tstg Tj PARAMETER Continuous drain source voltage Continuous drain current2 Continuous input current Non-repetitive peak input current Total power dissipation Storage temperature Continuous junction temperature CONDITIONS clamping tp ≤ 1 ms Tamb = 25 ˚C normal operation3 MIN. -55 - MAX. 50 self limiting 3 10 1.8 150 150 UNIT V A m A m A W ˚C ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 p F; R = 1.5 kΩ MIN. MAX. 2 UNIT k V OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source...