BUK200-50X Datasheet | NXP Semiconductors

DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch. QUICK REFERENCE DATA SYMBOL IL SYMBOL PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance MIN. 3.5 MAX. 50 10 150 100 UNIT A UNIT V A ˚C mΩ APPLICATIONS General controller for driving lamps, motors, solenoids, heaters. VBG IL Tj RON FEATURES Vertical power DMOS switch Low on-state resistance 5 V logic patible input with hysteresis Overtemperature protection self resets with hysteresis Overload protection against short circuit load with output current limiting; latched - reset by input High supply voltage load protection Supply undervoltage lock out Status indication for overload protection activated Diagnostic status indication of open circuit load Very low quiescent current Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery and overvoltage protection with external ground resistor FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND INPUT Fig.1. Elements of the TOPFET HSS. PINNING - SOT263 PIN 1 2 3 4 5 tab DESCRIPTION Ground Input Battery (+ve supply) Status Load PIN CONFIGURATION tab SYMBOL 1 2345 TOPFET HSS L leadform 263-01 Fig. 2. connected to pin 3 Fig. 3. April 1995 Rev 1.000 Philips Semiconductors Product specification Power MOS transistor TOPFET high side switch LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG PARAMETER Battery voltages Continuous off-state supply voltage Reverse battery voltages1 Repetitive peak supply voltage Continuous reverse supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature2 Lead temperature Input and status II IS II IS...