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BUK219-50Y - Power MOSFET

General Description

Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package.

Key Features

  • Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection.

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📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
BUK212-50Y Power MOSFET
BUK215-50Y Power MOSFET
BUK215-50YT TOPFET High Side Switch SMD Version
BUK218-50DC TOPFET dual high side switch
BUK218-50DY TOPFET dual high side switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product Specification PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. BUK219-50Y QUICK REFERENCE DATA SYMBOL IL SYMBOL VBG IL Tj RON PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MIN. 2 MAX. 50 6 150 180 UNIT A UNIT V A ˚C mΩ APPLICATIONS General controller for driving lamps, motors, solenoids, heaters.