BUK3F00-50WDFE Datasheet | NXP Semiconductors

BUK3F00-50WDxx Controller for Trench PLUS FETs Rev. 04 - 4 September 2008 Product data sheet 1. Introduction This data sheet describes a family of integrated circuits which provide direct digital control of multiple power switches (Trench PLUS FETs) for use in automotive applications, and which are available in various configurations. 2. General description Eight channel high-side switch controller in a leaded plastic quad flat package, with digital control and diagnostics, and load current measurement. Specific configurations are denoted by the last 2 letters in the type number. 3. Features I I I I I I I I I I I I I I Standby mode with very low power consumption Programmable drain current tripping Serial Peripheral Interface (SPI) munications Outputs controllable via SPI-bus or direct input Diagnostic status reporting via SPI-bus Analog and digital drain current measurement Watchdog for invalid mands or inactive SPI, with programmable time-out Programmable interrupt generator Overtemperature protection Pulse-width modulation with programmable frequency and duty cycle ESD protection on all pins Protection for battery transient overvoltage and reversed polarity battery connection Open-circuit detection Configurable fail-safe channel control options 4. Applications I Automotive applications such as DC and pulse-width modulation control in body control clusters, etc. NXP Semiconductors BUK3F00-50WDxx Controller for Trench PLUS FETs 5. Quick reference data Table 1. Symbol VBAT Tj [1] [2] Quick reference data Parameter battery supply voltage junction temperature Conditions operating [1] [2] Min 5.5 - 40 Typ 13 - Max 52 +150 Unit V °C When VBAT < 9 V, the charge pump cannot be guaranteed to drive the external MOSFETs to achieve their specified RDSon. When Tj > 125 °C, the device will function, but electrical parameters may deviate from the specified values. 6. Ordering information Table 2. Ordering information Package Name BUK3F00-50WDFM BUK3F00-50WDFY...