BUK438W-800B Datasheet | NXP Semiconductors

DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK438 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -800A 800 7.6 220 1.5 MAX. -800B 800 6.6 220 2.0 UNIT V A W Ω PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION SYMBOL d g 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -800A 7.6 4.8 30 220 150 150 MAX. 800 800 30 -800B 6.6 4.1 26 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 45 MAX. 0.57 UNIT K/W K/W February 1998 Rev 1.000 Philips Semiconductors Product specification Power MOS transistor BUK438W-800A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 m A VDS = VGS; ID = 1 m A VDS = 800 V; VGS = 0 V; Tj = 25 ˚C VDS = 800 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK438-800A BUK438-800B ID = 4.0 A MIN. 800 2.1 TYP. 3.0 5 0.1 10 1.2 1.6 MAX. 4.0 50 1.0 100 1.5 2.0 UNIT V V µA m A n A...