BUK446-1000B Datasheet | NXP Semiconductors

DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 1000 1.5 30 5 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 1000 1000 30 1.5 1.0 6 30 150 150 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink pound MIN. TYP. 55 MAX. 4.16 UNIT K/W K/W May 1995 Rev 1.200 Philips Semiconductors Product Specification Power MOS transistor STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 m A VDS = VGS; ID = 1 m A VDS = 1000 V; VGS = 0 V; Tj = 25 ˚C VDS = 1000 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 1.5 A MIN. 1000 2.1 TYP. 3.0 2 0.1 10 4.5 MAX. 4.0 20 1.0 100 5.0 UNIT V V µA m A n A Ω DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL gfs...