BUK454-800B - PowerMOS transistor

NXP Semiconductors

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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BUK454-800B powermos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BUK454-800B
Manufacturer	NXP Semiconductors
File Size	65.01 KB
Description	PowerMOS transistor
Datasheet	BUK454-800B Datasheet

Full PDF Text Transcription for BUK454-800B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK454-800B. For precise diagrams, and layout, please refer to the original PDF.

Philips Semiconductors Product Specification PowerMOS transistor BUK454-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic e...

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-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK454 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -800A 800 2.4 85 6 MAX. -800B 800 2.

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