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BUK456-200B - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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Datasheet Details

Part number BUK456-200B
Manufacturer NXP
File Size 63.04 KB
Description PowerMOS transistor
Datasheet download datasheet BUK456-200B Datasheet
Additional preview pages of the BUK456-200B datasheet.

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Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -200A 200 19 150 175 0.16 MAX. -200B 200 17 150 175 0.
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