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BUK456-60H - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope.

The device is intended for use in Automotive and general purpose switching applications.

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Datasheet Details

Part number BUK456-60H
Manufacturer NXP
File Size 57.98 KB
Description PowerMOS transistor
Datasheet download datasheet BUK456-60H Datasheet
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Philips Semiconductors Product Specification PowerMOS transistor BUK456-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
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