BUK464-60H - PowerMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

The device is intended for use in automotive and general purpose switching applications.

NXP

📥 Download Datasheet

BUK464-60H PowerMOS transistor by NXP - Datasheet Preview — Datasheet preview – BUK464-60H

Datasheet Details

Part number	BUK464-60H
Manufacturer	NXP
File Size	54.70 KB
Description	PowerMOS transistor
Datasheet	BUK464-60H Datasheet
Additional preview pages of the BUK464-60H datasheet.

📁 Similar Datasheet

BUK436-100A - PowerMOS transistor (Philips)
BUK436-100A - N-Channel MOSFET (INCHANGE)
BUK436-100B - PowerMOS transistor (Philips)
BUK436-100B - N-Channel MOSFET (INCHANGE)
BUK436-200A - N-Channel MOSFET (INCHANGE)
BUK436-200B - N-Channel MOSFET (INCHANGE)
BUK436-60A - N-Channel MOSFET (INCHANGE)
BUK436-60B - N-Channel MOSFET (INCHANGE)
BUK436-800A - N-Channel MOSFET (INCHANGE)
BUK436-800B - N-Channel MOSFET (INCHANGE)

Other Datasheets by NXP

BUK464-200A - PowerMOS transistor
BUK462-100A - PowerMOS transistor
BUK462-60A - PowerMOS transistor
BUK463-100A - PowerMOS transistor
BUK463-60A - PowerMOS transistor
BUK463-60B - PowerMOS transistor
BUK465-100A - PowerMOS transistor
BUK465-200A - PowerMOS transistor

Full PDF Text Transcription

Click to expand full text

Philips Semiconductors Product specification PowerMOS transistor BUK464-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.

Published: Mar 23, 2005 |