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BUK553-60A - PowerMOS transistor

Datasheet Summary

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

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Datasheet Details

Part number BUK553-60A
Manufacturer NXP
File Size 54.17 KB
Description PowerMOS transistor
Datasheet download datasheet BUK553-60A Datasheet
Additional preview pages of the BUK553-60A datasheet.

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Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK553-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK553 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 21 75 175 0.085 MAX. -60B 60 20 75 175 0.
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