BUK554-60H Description
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope The device is intended for use in automotive and general purpose switching applications. BUK554-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; 60 60 15 20 39 28 156 125 175 175 UNIT V V V V A...