BUK555-200B Datasheet PDF - NXP PowerMOS transistor Logic level FET Specs

BUK555-200B - PowerMOS transistor Logic level FET

Datasheet Summary

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

Datasheet Details

Part number	BUK555-200B
Manufacturer	NXP
File Size	70.55 KB
Description	PowerMOS transistor Logic level FET
Datasheet	BUK555-200B Datasheet
Additional preview pages of the BUK555-200B datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK555-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -200A 200 14 125 175 0.23 MAX. -200B 200 13 125 175 0.

Published: Mar 23, 2005 |