BUK556-60H datasheet by NXP Semiconductors.
| Part number | BUK556-60H |
|---|---|
| Datasheet | BUK556-60H_PhilipsSemiconductors.pdf |
| File Size | 53.76 KB |
| Manufacturer | NXP Semiconductors |
| Description | PowerMOS transistor Logic level FET |
|
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N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive and general purpose switching applications. BUK556-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance;.
View all NXP Semiconductors datasheets
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|---|---|
| BUK556-60A | PowerMOS transistor Logic level FET |
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| BUK552-100B | PowerMOS transistor |
| BUK552-60A | PowerMOS transistor |
| BUK552-60B | PowerMOS transistor |
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| BUK553-60A | PowerMOS transistor |
| BUK553-60B | PowerMOS transistor |
