BUK565-60H Datasheet | NXP Semiconductors

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 60 41 125 175 38 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g source drain 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ tp ≤ 50 µs Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 15 20 41 29 164 125 175 175 UNIT V V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. minimum footprint, FR4 board (see Fig. 18) 50 MAX. 1.2 UNIT K/W K/W June 1995 Rev 1.000 Philips Semiconductors Product specification Power MOS transistor Logic level FET STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 m A VDS = VGS; ID = 1 m A VDS = 60 V; VGS = 0 V; Tj = 25 ˚C VDS = 60 V; VGS = 0 V; Tj =125 ˚C VGS = ±15 V; VDS = 0 V VGS = 5 V; ID = 20 A MIN. 60 1.0 - BUK565-60H TYP. 1.5 1 0.1 10 25 MAX. 2.0 10 1.0 100...