BUK573-48C Datasheet | NXP Semiconductors

DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in automotive applications. It has built-in zener diodes providing active drain voltage clamping. QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot WDSRR RDS(ON) PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Repetitive clamped turn off energy; Tj = 150˚C Drain-source on-state resistance; VGS = 5 V MIN. 40 TYP. MAX. UNIT 48 58 13 25 50 85 V A W m J mΩ PINNING - SOT186A PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDG ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS continuous continuous Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 - 55 MAX. 30 30 15 13 8.2 52 25 150 150 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink pound MIN. TYP. 55 MAX. 5 UNIT K/W K/W August 1994 Rev 1.000 Philips Semiconductors Product specification Power MOS transistor Clamped logic level FET STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DG VGS(TO) VGS(ON) IDSS IGSS RDS(ON) PARAMETER Drain-gate zener voltage Gate threshold voltage Gate voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS 0.2 < -IG < 0.4 m A; -55˚C < Tj < 150˚C VDS = VGS; ID = 1 m A VDS = 10 V; ID = 10 A; -55˚C < Tj < 150˚C VDS = 30 V; VGS = 0 V; Tj =150 ˚C VGS = ±15 V; VDS = 0 V; Tj =150 ˚C VGS = 5 V; ID = 10 A MIN. 38 1.0 2.0 - BUK573-48C TYP. 45...