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BUK625R2-30C

Manufacturer: NXP Semiconductors

BUK625R2-30C datasheet by NXP Semiconductors.

BUK625R2-30C datasheet preview

BUK625R2-30C Datasheet Details

Part number BUK625R2-30C
Datasheet BUK625R2-30C-NXP.pdf
File Size 175.88 KB
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS intermediate level FET
BUK625R2-30C page 2 BUK625R2-30C page 3

BUK625R2-30C Overview

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

BUK625R2-30C Key Features

  • AEC Q101 pliant
  • Suitable for standard and logic level
  • Suitable for thermally demanding environments due to 175 °C rating
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BUK625R2-30C Distributor

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