Datasheet4U Logo Datasheet4U.com

BUK625R2-30C - N-channel TrenchMOS intermediate level FET

Datasheet Summary

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Suitable for standard and logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

📥 Download Datasheet

Datasheet preview – BUK625R2-30C

Datasheet Details

Part number BUK625R2-30C
Manufacturer NXP
File Size 175.88 KB
Description N-channel TrenchMOS intermediate level FET
Datasheet download datasheet BUK625R2-30C Datasheet
Additional preview pages of the BUK625R2-30C datasheet.

📁 Similar Datasheet

  • BUK625R0-40C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
  • BUK6207-30C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
  • BUK6207-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6210-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6211-75C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK6213-30A - N-Channel MOSFET (NXP Semiconductors)
  • BUK6213-30C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6215-75C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK6217-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6218-40C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
Other Datasheets by NXP
  • BUK6208-40C - N-channel TrenchMOS intermediate level FET
  • BUK6209-30C - N-channel TrenchMOS intermediate level FET
  • BUK6212-40C - N-channel TrenchMOS intermediate level FET
  • BUK624R5-30C - N-channel TrenchMOS Intermediate Level FET
  • BUK637-400B - Power MOS Transistor / Fast Recovery Diode FET
  • BUK638-1000 - PowerMOS Transistor / Fast Recovery Diode FET
  • BUK638-500B - PowerMOS Transistor / Fast Recovery Diode FET
  • BUK638-800 - PowerMOS Transistor / Fast Recovery Diode FET

Full PDF Text Transcription

Click to expand full text
DPAK BUK625R2-30C N-channel TrenchMOS intermediate level FET Rev. 1 — 12 July 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.
Published: |