Datasheet Summary
DPAK
N-channel TrenchMOS intermediate level FET
Rev. 1
- 12 July 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Suitable for standard and logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power...