NXP Semiconductors BUK6607-75C
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.| Part No. | BUK6607-75C |
|---|---|
| Datasheet | BUK6607-75C Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel TrenchMOS FET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3APPLICATIONS
12 V and 24 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 75 100 204 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 6 7 mΩ NXP Semiconductors BUK6607-75C N-channel TrenchMOS FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 191 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive...
