BUK664R4-55C Datasheet PDF - NXP N-channel TrenchMOS Intermediate Level FET Specs

BUK664R4-55C - N-channel TrenchMOS Intermediate Level FET

Datasheet Summary

Description

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

AEC Q101 compliant.
Suitable for intermediate level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

Datasheet Details

Part number	BUK664R4-55C
Manufacturer	NXP
File Size	381.43 KB
Description	N-channel TrenchMOS Intermediate Level FET
Datasheet	BUK664R4-55C Datasheet
Additional preview pages of the BUK664R4-55C datasheet.

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Full PDF Text Transcription

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DataSheet.in BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 17 August 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.

Published: Oct 16, 2010 |