BUK664R4-55C Description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
BUK664R4-55C Key Features
- AEC Q101 pliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating