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BUK664R4-55C Datasheet N-channel Trenchmos Intermediate Level Fet

Manufacturer: NXP Semiconductors

Overview: DataSheet.in BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 17 August 2010 Objective data sheet 1. Product profile 1.

General Description

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2

Key Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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