NXP Semiconductors BUK752R3-40C
This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.| Part No. | BUK752R3-40C |
|---|---|
| Datasheet | BUK752R3-40C Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175°C rating 1.3APPLICATIONS
12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation applications 1.4 Quick reference data Table 1. VDS ID Ptot QGD Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; VDS = 32 V; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min [1] [2] Typ 67 Max 40 100 333 Unit V A W nC drain-source voltage drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics Static characteristics RDSon drain-source on-state resistance 1.96 2.3 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] [2] - - 1.2 J Refer to document 9397 750 12572 for further information.
