NXP Semiconductors BUK7535-55A
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.| Part No. | BUK7535-55A |
|---|---|
| Datasheet | BUK7535-55A Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel TrenchMOS standard level FET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3APPLICATIONS
12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 20 A; Tj = 175 °C; see Figure 11; see Figure 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 11; see Figure 12 Avalanche ruggedness EDS(AL)S non-repetitive ID = 14 A; Vsup ≤ 55 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; energy Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 55 V - - 35 A - - 85 W - - 70 mΩ - 30 35 mΩ - - 49 mJ NXP Semiconductors BUK7535-55A N-channel TrenchMOS standard level FET 2.
