NXP Semiconductors BUK7606-55B
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.| Part No. | BUK7606-55B |
|---|---|
| Datasheet | BUK7606-55B Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low conduction losses due to low on-state resistance● Q101 compliant
● Suitable for standard level gate drive sources
● Suitable for thermally demanding environments due to 175 °C rating 1.3
APPLICATIONS
● 12 V and 24 V loads● Automotive systems
● General purpose power switching
● Motors, lamps and solenoids NXP Semiconductors BUK7606-55B N-channel TrenchMOS standard level FET 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 55 75 254 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 5.1 6 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain...
