BUK7608-40B Datasheet | NXP Semiconductors

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Q101 pliant - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V loads - Automotive systems - General purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; [1] - - 75 A see Figure 1; see Figure 3; Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 157 W Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 241 m J QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 14 - 12 - n C Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 11 - 6.6 8 mΩ [1] Continuous current is limited by package. NXP...