NXP Semiconductors BUK7610-55AL
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.| Part No. | BUK7610-55AL |
|---|---|
| Datasheet | BUK7610-55AL Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
175 °C rated Stable operation in linear mode Q101 compliant TrenchMOS technology 1.3APPLICATIONS
12 V and 24 V loads DC linear motor control Automotive systems Repetitive clamped inductive switching 1.4 Quick reference data Table 1. Symbol ID Ptot EDS(AL)S Quick reference Parameter drain current total power dissipation non-repetitive drain-source avalanche energy Conditions VGS = 10 V; Tmb = 25 °C; see Figure 4 and 1 Tmb = 25 °C; see Figure 2 ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 [1] Min - Typ - Max 75 300 1.1 Unit A W J Avalanche ruggedness Static characteristics RDSon drain-source on-state resistance 8.5 10 mΩ [1] Continuous current is limited by package. NXP Semiconductors BUK7610-55AL N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S DDESCRIPTION
gate drain source mounting base; connected to drain 1 G mbb076 Simplified outline mb Graphic symbol D S 2 3 SOT404 (D2PAK) 3.
