NXP Semiconductors BUK764R4-60E
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.| Part No. | BUK764R4-60E |
|---|---|
| Datasheet | BUK764R4-60E Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● AEC Q101 compliant● Repetitive avalanche rated
● Suitable for thermally demanding environments due to 175 °C rating
● True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3
APPLICATIONS
● 12 V Automotive systems● Motors, lamps and solenoid control
● Start-Stop micro-hybrid applications
● Transmission control
● Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 60 100 234 Unit V A W Static characteristics drain-source on-state resistance 3.23 4.5 mΩ Dynamic characteristics QGD gate-drain charge 26.1 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK764R4-60E N-channel TrenchMOS standard level FET 2.
