NXP Semiconductors BUK765R0-100E
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.| Part No. | BUK765R0-100E |
|---|---|
| Datasheet | BUK765R0-100E Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● AEC Q101 compliant● Repetitive avalanche rated
● Suitable for thermally demanding environments due to 175 °C rating
● True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3
APPLICATIONS
● 12V, 24V and 48V Automotive systems● Electric and electro-hydraulic power steering
● Motors, lamps and solenoid control
● Start-Stop micro-hybrid applications
● Transmission control
● Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; see Figure 13; see Figure 14 [1] Min - Typ 3.9 Max 100 120 357 5 Unit V A W mΩ Static characteristics Dynamic characteristics QGD 65 nC [1] Continuous current is limited by package.
