Datasheet4U Logo Datasheet4U.com

BUK7675-55 - TrenchMOS transistor Standard level FET

Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by NXP
  • BUK7675-55 - TrenchMOS transistor Standard level FET
  • BUK76 - (BUK75 / BUK76) TrenchMOS standard level FET
  • BUK7605-30A - TrenchMOS transistor Standard level FET
  • BUK7606-30 - TrenchMOS transistor Standard level FET
  • BUK7606-55A - N-channel TrenchMOS standard level FET
  • BUK7608-40B - N-channel TrenchMOS standard level FET
  • BUK7608-55 - TrenchMOS transistor Standard level FET
  • BUK7610-100B - N-channel TrenchMOS standard level FET

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK7675-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 19.
Published: |