Download the BUK794R1-40BT datasheet PDF.
This datasheet also covers the BUK714R1-40BT variant, as both devices belong to the same trenchmos standard level fet family and are provided as variant models within a single manufacturer datasheet.
General Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
The devices include TrenchPLUS diodes for over-temperature protection.
Key Features
s Integrated temperature sensor s Very low on-state resistance s Q101 compliant s 175 °C rated. 1.3.
Note: The manufacturer provides a single datasheet file (BUK714R1-40BT_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for BUK794R1-40BT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BUK794R1-40BT. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com BUK71/794R1-40BT TrenchMOS™ standard level FET Rev. 01 — 4 November 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode fiel...
View more extracted text
data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices include TrenchPLUS diodes for over-temperature protection. Product availability: BUK714R1-40BT in SOT426 (D2-PAK) BUK794R1-40BT in SOT263B (TO-220AB). 1.2 Features s Integrated temperature sensor s Very low on-state resistance s Q101 compliant s 175 °C rated. 1.3 Applications s Electrical Power Assisted Steering s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s s RDSon = 3
BUK794R1-40BT Datasheet
