NXP Semiconductors BUK7E2R3-40C
This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.| Part No. | BUK7E2R3-40C |
|---|---|
| Datasheet | BUK7E2R3-40C Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel TrenchMOS standard level FET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175°C rating 1.3APPLICATIONS
12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] [2] Min Typ Max 40 100 333 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation drain-source on-state resistance Symbol Parameter Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 1.96 2.3 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] [2] - - 1.2 J Refer to document 9397 750 12572 for further information. Continuous current is limited by package.
