NXP Semiconductors BUK7K12-60E
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.| Part No. | BUK7K12-60E |
|---|---|
| Datasheet | BUK7K12-60E Download |
| Manufacturer |  NXP Semiconductors |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
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● Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) of greater than 1 V at 175 °C 3.
APPLICATIONS
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● 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 ID = 10 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 60 40 68 Unit V A W Static characteristics FET1 and FET2 drain-source on-state resistance 7.64 9.3 mΩ Dynamic characteristics FET1 and FET2 QGD gate-drain charge 11 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7K12-60E Dual N-channel 60 V, 9.3 mΩ standard level MOSFET 5.
