NXP Semiconductors BUK7Y10-30B
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.| Part No. | BUK7Y10-30B |
|---|---|
| Datasheet | BUK7Y10-30B Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3APPLICATIONS
12 V Loads Automotive systems General purpose power switch Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 30 67 85 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 7.8 10 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 67 A; Vsup ≤ 30 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 14 101 mJ Dynamic characteristics QGD 5.6 nC NXP Semiconductors BUK7Y10-30B N-channel TrenchMOS standard level FET 2.
