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BUK7Y14-80E Datasheet PDF

NXP Semiconductors BUK7Y14-80E

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Part No. BUK7Y14-80E
Datasheet BUK7Y14-80E Download
Manufacturer
NXP Semiconductors
Description MOSFET
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BUK7Y14-80E datasheet page 1 preview

FEATURES AND BENEFITS

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● Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3.

APPLICATIONS

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● 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 15 A; VDS = 64 V; Tj = 25 °C; Fig. 13; Fig. 14 12.9 nC Min Typ Max 80 65 147 Unit V A W Static characteristics drain-source on-state resistance 9.2 14 mΩ Dynamic characteristics QGD gate-drain charge Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7Y14-80E N-channel 80 V, 14 mΩ standard level MOSFET in LFPAK56 5.
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