NXP Semiconductors BUK7Y65-100E
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.| Part No. | BUK7Y65-100E |
|---|---|
| Datasheet | BUK7Y65-100E Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
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● Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3.
APPLICATIONS
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● 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 Min Typ Max 100 19 64 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 44 65 mΩ Dynamic characteristics QGD VGS = 10 V; ID = 5 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 7 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7Y65-100E N-channel 100 V, 65 mΩ standard level MOSFET in LFPAK56 5.
