Datasheet Summary
Philips Semiconductors
Product specification
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
GENERAL DESCRIPTION
Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device Features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV and active drain voltage clamping. Temperature sensitive diodes are incorporated for monitoring chip temperature. The device is intended for use in automotive and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL V(CL)DSR ID Ptot Tj RDS(ON) VF...