BUK9506-55A Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which Features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 55 75 230 175 6.3 5.8 UNIT V A W ˚C mΩ mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d...