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BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
Rev. 03 — 30 November 2004 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.
1.2 Features
s TrenchMOS™ technology s 175 °C rated s Q101 compliant s Logic level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 679 mJ s ID ≤ 75 A s RDSon = 5.1 mΩ (typ) s Ptot ≤ 258 W.
2.
BUK9506-55B Datasheet
