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BUK9506-55B - (BUK9x06-55B) N-channel TrenchMOSTM logic level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.

Key Features

  • s TrenchMOS™ technology s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com BUK95/96/9E06-55B N-channel TrenchMOS™ logic level FET Rev. 03 — 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. 1.2 Features s TrenchMOS™ technology s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 679 mJ s ID ≤ 75 A s RDSon = 5.1 mΩ (typ) s Ptot ≤ 258 W. 2.