BUK9510-100B Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive Trench MOS™ technology. Product availability: BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK). 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 pliant s Logic level patible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 629 m J s ID ≤ 75 A s RDSon = 8.6 mΩ (typ) s Ptot ≤ 300 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) MBK106 Simplified outline mb Symbol mb d [1] g s MBB076 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors BUK95/9610-100B Trench MOS™ logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 100 V; VGS = 5 V; RGS = 50 Ω; starting Tmb = 25 °C [1] [2] [1] [2] [2] Conditions RGS = 20 kΩ Min - 55 - 55 - Max 100 100 ±15 110 75 75 438 300 +175 +175 110 75 438 629 Unit V V V A A A A W °C °C A A A m J Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] [2] Current is limited by power dissipation chip...