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BUK9515 - TrenchMOS transistor Logic level FET

General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which

Key Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9515-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 100 75 230 175 15 14.