BUK9520-55 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device Features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 52 116 175 20 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate...