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BUK953R2-40B Datasheet PDF

NXP Semiconductors BUK953R2-40B

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Part No. BUK953R2-40B
Datasheet BUK953R2-40B Download
Manufacturer
NXP Semiconductors
Description N-channel TrenchMOS logic level FET
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BUK953R2-40B datasheet page 1 preview

FEATURES AND BENEFITS

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● AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 3.

APPLICATIONS

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● 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; Fig. 13 37 nC [1] Min - Typ - Max 40 100 300 Unit V A W Static characteristics drain-source on-state resistance 2.4 2.7 2.8 3.2 mΩ mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK953R2-40B N-channel Tre...
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