NXP Semiconductors BUK9606-40B
N-Channel MOSFET
DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9506-40B in SOT78 (TO-220AB) BUK9606-40B in SOT404 (D2-PAK). 1.2FEATURES
s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3APPLICATIONS
s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 494 mJ s ID ≤ 75 A s RDSon = 5.7 mΩ (typ) s Ptot ≤ 203 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outlines and symbolDESCRIPTION
gate (g) drain (d) source (s) mounting base, connected to drain (d) 2 MBK106 Simplified outline mb Symbol mb [1] d g s MBB076 1 2 3 1 3 MBK116 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) Philips Semiconductors BUK95/9606-40B TrenchMOS™ logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).