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BUK96150-55A - N-channel transistor

Download the BUK96150-55A datasheet PDF. This datasheet also covers the BUK95150-55A variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

Key Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

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Note: The manufacturer provides a single datasheet file (BUK95150-55A-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors TrenchMOS transistor Logic level FET Product specification BUK95150-55A BUK96150-55A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. PINNING TO220AB & SOT404 PIN DESCRIPTION 1 gate 2 drain 3 source tab/mb drain QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX.