BUK9775-55A Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™1 technology, featuring very low on-state resistance. Product availability: BUK9775-55A in SOT186A (TO-220F). 2. Features s s s s Trench MOS™ technology Q101 pliant 150 °C rated Logic level patible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; isolated g mbb076 d s 1 2 3 MBK110 SOT186A (TO-220F) 1. Trench MOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors N-channel Trench MOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 10 A Tj = 25 °C; VGS = 4.5 V; ID = 10 A Typ 63 Max 55 11 18 150 75 84 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) non-repetitive gate-source voltage drain current (DC) tp ≤ 50 µs Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 11 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting T j = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 [1] Conditions RGS = 20 kΩ Min - 55 - 55 - Max 55 55 ±10 ±15 11 8 46 18...